bat 68-07 oct-07-1999 1 silicon schottky diodes ? for mixer applications in the vhf / uhf range ? for high-speed switching applications vps05178 2 1 3 4 32 eha07008 1 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bat 68-07 87s 1 = c1 2 = c2 3 = a2 4 = a1 sot-143 maximum ratings symbol value parameter unit diode reverse voltage 8 v v r i f 130 forward current ma total power dissipation , t s 60 c 150 mw p tot t j 150 junction temperature c -55 ... 150 storage temperature t st g thermal resistance junction - ambient 1) r thja 750 k/w junction - soldering point 590 r thjs 1) package mounted on alumina 15mm x 17.6mm x 0.7mm)
bat 68-07 oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit max. min. typ. dc characteristics breakdown voltage i (br) = 10 a v (br) - 8 v - i r - 0.1 a - reverse current v r = 1 v i r - - reverse current v r = 1 v, t a = 60 c 1.2 v f - - - - 340 500 mv forward voltage i f = 1 ma i f = 10 ma ac characteristics - 1 diode capacitance v r = 0 v, f = 1 mhz c t pf - 10 r f - differential forward resistance i f = 5 ma, f = 10 khz ? -
bat 68-07 oct-07-1999 3 forward current i f = f ( t a *; t s) * package mounted on alumina 0?c 0 ehd07105 bat 68... f a t ; t s 50 100 150 20 40 60 80 100 120 140 160 ma 200 t a s t reverse current i r = f ( v r ) t a = parameter 0 10 ehd07102 bat 68... r r v 10 10 10 10 a 150 c t a = 12 3v 4 -3 -2 -1 0 2 1 10 c 85 c 25 diode capacitance c t = f ( v r ) f = 1mhz 0 0 ehd07103 bat 68... c t r v 234 0.5 pf 1.0 1v forward current i f = f ( v f ) t a = parameter 0.0 10 ehd07101 bat 68... f f v 10 10 10 10 -40 c a = ma -2 -1 0 1 2 c 25 c 85 c 150 0.1 0.2 0.3 0.4 0.5 v 0.6 t
bat 68-07 oct-07-1999 4 differential forward resistance r f = f ( i f ) f = 10 khz 10 ehd07104 bat 68... r f -1 0 10 1 10 ma ? 10 2 f 0 10 1 10 2 10 3 10
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